منابع مشابه
Self-Driven Photodetector and Ambipolar Transistor in Atomically Thin GaTe-MoS2 p-n vdW Heterostructure.
Heterostructure engineering of atomically thin two-dimensional materials offers an exciting opportunity to fabricate atomically sharp interfaces for highly tunable electronic and optoelectronic devices. Here, we demonstrate abrupt interface between two completely dissimilar material systems, i.e, GaTe-MoS2 p-n heterojunction transistors, where the resulting device possesses unique electronic pr...
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ژورنال
عنوان ژورنال: Nature Communications
سال: 2020
ISSN: 2041-1723
DOI: 10.1038/s41467-020-18195-0